Researchers propose a universal asymmetric spin torque mechanism that deterministically switches the Neel vector in collinear antiferromagnets for ultrafast memory.

Researchers propose a universal mechanism that enables deterministic electrical control of collinear antiferromagnets.

Non-volatile memories that are faster, cheaper and less power-hungry than existing solutions might be built by using solid-state devices in which information is stored and read electrically rather ...

A group of physicists at Hefei Institutes of Physical Science (HFIPS) of Chinese Academy of Sciences (CAS) revealed a secret of antiferromagnets, which could accelerate spintronics, a next-gen data ...

University of California-Los Angeles, Los Angeles, California, is being awarded a $5 million contract modification for the Spin-Torque Transfer Random Access Memory program. The Defense Advanced ...

A new technical paper titled “Modeling and Optimization of Two-Terminal Spin-Orbit-Torque MRAM” was published by researchers at Georgia Institute of Technology, MIT, and Cornell University. “This ...

A technical paper titled “Impact of Technology Scaling and Back-End-of-the-Line Technology Solutions on Magnetic Random-Access Memories” was published by researchers at Georgia Institute of Technology ...